Data sheet transistor c 6090

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2SC6090LSNo. A0996-1/4Features•High speed.•High breakdown voltage (VCBO=1500V).•Adoption of high reliability HVP process.• datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. IC 150mA FMY1A (SMT5) lFeatures lInner circuit 1) Included a 2SA1037AK and a 2SC2412K transistor in a EMT, UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) PNP and NPN transistors have common emitters. 4) Mounting cost and area can be cut in half. EMY1 / UMY1N FMY1A lApplication General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 ... Transistors are in stock with same-day shipping at Mouser Electronics from industry leading manufacturers.Mouser is an authorized distributor for many transistor manufacturers including Diodes Inc., Infineon, IXYS, Microsemi, Nexperia, ON Semiconductor, ROHM, STMicroelectronics, Texas Instruments, Toshiba, Vishay & more. 2SC6090LSNo. A0996-1/4Features•High speed.•High breakdown voltage (VCBO=1500V).•Adoption of high reliability HVP process.• datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes and other semiconductors. 9014W(BR3DG9014W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-323 Plastic Package. 特征 / Features P 大,h 高且特性好,与 9015W(BR3CG9015W)互补。 C FE High PC and hFE, excellent hFE linearity, complementary pair with 9015W(BR3CG9015W).
 

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General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 40 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25 ...
 

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS BC107/A/B/C BC108/A/B/C BC109/A/B/C TO-18 Metal Can Package Low Noise General Purpose Audio Amplifiers ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BC107 BC108 BC109 UNIT VCEO Collector Emitter Voltage 45 25 V 25 VCBO ... Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R JA 200 °C/W Thermal Resistance, Junction to Case R JC 83 ...

TRANSISTOR+2sC+6090+EQUIVALENT datasheet, ... equivalent transistor c 495 92CS-223S5 radiosonde TA8340 NYTRONICS choke Nytronics relay 92CM-22389 transistor C4 168 H ...

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9012M(BR3CG9012M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features P 、I 大,h 特性极好,与 9013M(BR3DG9013M)互补。 C C FE High PC and IC, Excellent hFE linearity, complementary pair with 9013M(BR3DG9013M). NXP Semiconductors Product data sheet NPN switching transistor MMBT2222A DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices.